Fereshteh Saniee, Nessa (2010)
M.Phil. thesis, University of Birmingham.
Restricted to Repository staff only until 30 June 2013.
Thin silicon doped zinc oxide films were ablated onto borosilicate glass substrates by pulsed laser deposition of a bulk ZnO target doped with 2 wt% silicon. The rotating target was irradiated at low ambient oxygen pressures by a KrF Excimer laser (Lambda physics LPX 300) emitting pulses of 0.18 ns in length, with frequency of 10 Hz, at a wavelength of 248 nm and with energy fluence of 1-2 J/cm2. The temperature of the substrate was changed from room temperature to 500˚C at the fixed oxygen pressure of 5 mTorr. The partial oxygen pressure was varied from 0.01 to 500 mTorr at the substrate temperature of 300˚C. The growth rate was differed by varying target-to-substrate distance from 50 to 70 mm at 5 mm increment. The films were characterised by atomic force microscopy, Hall effect measurements, ellipsometry, laser microscope, X-ray diffraction, spectrophotometry, four point probe and scanning electron microscopy. Deposition parameters such as, the substrate temperature, oxygen pressure, target-to-substrate distance and the number of pulses were varied to maximise optical transmittance and minimise resistivity. The optimum deposition circumstances yielded a film of resistivity of 4.12×10-4 Ωcm and a transmittance of 89%.
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