Manyam, Jedsada (2011)
Ph.D. thesis, University of Birmingham.
Fullerene derivatives have been demonstrated as negative-tone resists for electron beam lithography with impressive capability for high resolution and high plasma etching resistance, due to their carbon-rich nature. Their primary drawback of extremely poor sensitivity has been addressed by implementation of chemical amplification. A three-component chemically amplified negative-tone resist has been developed via the addition of a photoacid generator and a crosslinker to a fullerene derivative. This thesis work presents a significant extension of the previous work. The resists have undergone comprehensive optimisation, and systematic characterisation of electron beam lithography behaviours. In the first part, a systematic study into chemical amplification of negative-tone fullerene resists through variation of resist composition, additive, and resist processing in order to optimise sensitivity, resolution, line width roughness and etch resistance is presented. Sensitivity of sub 10 C/cm2 at 20 keV, half pitch resolution of 20 nm, a minimum sparse feature linewidth of 12 nm, line width roughness of sub 5 nm, and high etch resistance comparable with a commercial novolac resist have been demonstrated. The second part presents the development of a chemically amplified positive-tone fullerene based resists with the advantage of aqueous base solution development. Their lithographic capability is evaluated and discussed.
|Type of Work:||Ph.D. thesis.|
|Supervisor(s):||Robinson, Alex P. G. and Palmer, Richard E.|
|School/Faculty:||Colleges (2008 onwards) > College of Engineering & Physical Sciences|
|Department:||Nanoscale Physics Research Laboratory, School of Physics and Astronomy|
|Subjects:||TK Electrical engineering. Electronics Nuclear engineering|
|Institution:||University of Birmingham|
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